The transistor works in the amplifying state. The measurement results are shown in the figure. If the transistor is made of the material of 锗 ,|VB-VE|=0.3V. If the transistor is made of the material silicon, |VB-VE|=0.7V. We can arrange the voltages of the three potentials in descending order:(-2V)----(-2.3V)----)-7V), then we get the differences of two voltages of the three voltages, we can find if the absolute value of a diffe ren ce is 0.3V, so it is made of 锗 material. If the absolute value of the difference is equal to 0.7V or 0.6V, it is made of silicon. The rest pole is C pole. If VC>VB>VE, it is NPN transistor, if VC